Computer simulation of electronic and magnetic properties of ternary chalcopyrites doped with transition metals

A. Krivosheeva, V. Shaposhnikov, V. Borisenko, F. Arnaud d'Avitaya, J. Lazzari
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引用次数: 6

Abstract

Electronic and magnetic properties of BeSiAs2 and BeGeAs2 ternary compounds with chalcopyrite structure doped with transition metals (Mn, Cr) have been theoretically studied from the first principles. The influence of the substitutional positions of impurity atoms and their type on the appearance of a ferromagnetic (FM) or antiferromagnetic (AFM) state has been analyzed. It was found that magnetic moment of the systems does not depend strongly on the concentration and distance between impurity atoms, while the most important factors observed are the impurity type and substitution sites. Configurations with Mn atoms in the II-group sites are energetically stable in the AFM state, whereas Cr-doped ones seem to be in the FM state. Substitution of IV-group positions by both metals results preferably in the FM state, however these positions are not energetically favorable in comparison with II-group ones. The spin polarization of doped materials is evaluated and their possible application in spintronics is analyzed.
掺杂过渡金属的三元黄铜矿的电子和磁性能的计算机模拟
从第一性原理出发,研究了掺杂过渡金属(Mn, Cr)的黄铜矿结构的besas2和BeGeAs2三元化合物的电子和磁性能。分析了杂质原子的取代位置及其类型对铁磁态和反铁磁态形成的影响。结果表明,体系的磁矩与杂质原子间的距离和浓度关系不大,而杂质类型和取代位是影响体系磁矩的重要因素。Mn原子在ii基团位置的构型在AFM状态下能量稳定,而cr掺杂的构型似乎处于FM状态。用这两种金属取代iv基团的位置可以得到FM态,但与ii基团的位置相比,这些位置在能量上并不有利。评价了掺杂材料的自旋极化特性,并分析了其在自旋电子学中的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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