Electronic Structure and Charge Distribution in the C60‐FET

S. Wehrli, D. Poilblanc, M. Rice, M. Sigrist
{"title":"Electronic Structure and Charge Distribution in the C60‐FET","authors":"S. Wehrli, D. Poilblanc, M. Rice, M. Sigrist","doi":"10.1063/1.1514108","DOIUrl":null,"url":null,"abstract":"We study the charge profile of a C60‐FET (field effect transistor) as used in the experiments of Schon, Kloc and Batlogg. In the first part we consider the charge profile in the interface layers. We find that the induced charge is spread out over several layers at low doping and becomes confined to the first layer at high doping, i.e. the regime where superconductivity is observed. In the second part we refine our model in order to study the charge profile within a single layer. We find that the electric field gives rise to a molecular Stark which leads to a splitting of the energy levels.","PeriodicalId":196292,"journal":{"name":"Structural and Electronic Properties of Molecular Nanostructures. XVI International Winterschool on Electronic Properties of Novel Materials","volume":"406 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Structural and Electronic Properties of Molecular Nanostructures. XVI International Winterschool on Electronic Properties of Novel Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.1514108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We study the charge profile of a C60‐FET (field effect transistor) as used in the experiments of Schon, Kloc and Batlogg. In the first part we consider the charge profile in the interface layers. We find that the induced charge is spread out over several layers at low doping and becomes confined to the first layer at high doping, i.e. the regime where superconductivity is observed. In the second part we refine our model in order to study the charge profile within a single layer. We find that the electric field gives rise to a molecular Stark which leads to a splitting of the energy levels.
C60‐FET中的电子结构和电荷分布
我们研究了用于Schon, Kloc和Batlogg实验的C60‐FET(场效应晶体管)的电荷分布。在第一部分中,我们考虑了界面层中的电荷分布。我们发现,在低掺杂情况下,诱导电荷分布在几层上,而在高掺杂情况下,即在观察到超导的情况下,诱导电荷被限制在第一层。在第二部分中,我们改进了我们的模型,以便研究单层内的电荷分布。我们发现电场引起分子斯塔克,导致能级分裂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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