Noise immunity characteristics of semiconductor memory devices-a comparison of UV-EPROM with static RAM

Abstract

This paper describes noise immunity characteristics of two kinds of semiconductor memory devices: ultraviolet erasable programmable ROM (UV-EPROM) and static RAM (SRAM). Noise immunity characteristics of SRAM are compared with that of UV-EPROM and it is concluded that UV-EPROM is superior to SRAM from the point of view that a the former has a self-recovery function after malfunction due to noise and is effective in realizing safe and reliable digital systems.