S. H. Kim, J.H. Kim, J. Choi, Y. Byun, Y. Jhon, S. Lee, D. Woo, S.H. Kim
{"title":"All-optical NAND gate using cross gain modulation in semiconductor optical amplifiers","authors":"S. H. Kim, J.H. Kim, J. Choi, Y. Byun, Y. Jhon, S. Lee, D. Woo, S.H. Kim","doi":"10.1049/EL:20052320","DOIUrl":null,"url":null,"abstract":"By using gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical NAND gate at 10 Gbps is demonstrated. The all-optical NAND gate operates in single mechanism, which is XGM.","PeriodicalId":420162,"journal":{"name":"2005 Quantum Electronics and Laser Science Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"113","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 Quantum Electronics and Laser Science Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/EL:20052320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 113
Abstract
By using gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical NAND gate at 10 Gbps is demonstrated. The all-optical NAND gate operates in single mechanism, which is XGM.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
