A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2013-06-02 DOI:10.1109/RFIC.2013.6569610

P. Candra, V. Jain, P. Cheng, J. Pekarik, R. Camillo-Castillo, P. Gray, T. Kessler, J. Gambino, J. Dunn, D. Harame

引用次数: 13

Abstract

A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBT with fT/fMAX of 260/320 GHz, a high breakdown (HB) HBT with BVCEO of 3.5V, 130nm RF CMOS, and a full suite of passive devices. Specific device results pertaining to this BiCMOS8XP technology are discussed in this paper.

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一种适用于毫米波应用的130nm SiGe BiCMOS技术，具有260/320 GHz的fT/fMAX的HBT

提出了一种可制造的130纳米SiGe BiCMOS射频技术，用于高性能毫米波模拟应用，该技术将高速SiGe异质结双极晶体管(HBT)集成到功能齐全的RFCMOS中。该技术具有fT/fMAX为260/320 GHz的高性能(HP) SiGe HBT, BVCEO为3.5V的高击穿(HB) HBT, 130nm RF CMOS和全套无源器件。本文讨论了有关BiCMOS8XP技术的具体器件结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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