A 0.65V, 1.9mW CMOS low-noise amplifier at 5GHz

Yanjie Wang, M. Z. Khan, K. Iniewski
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引用次数: 8

Abstract

An ultra low-voltage (0.65 V), 5 GHz low noise amplifier (LNA) has been designed, laid out and simulated using Spectre simulator in a standard TSMC 0.18/spl mu/m CMOS technology. The proposed LNA achieves better performance than conventional cascode topology and are confirmed by simulation results. The LNA provides a high gain of 20 dB, a noise figure of 1.4 dB, power dissipation of 1.9 mW from a 0.65 V power supply. To the best of author's knowledge this is the lowest voltage supply CMOS LNA design reported to date.
一个0.65V, 1.9mW的CMOS低噪声5GHz放大器
在台积电0.18/spl mu/m标准CMOS工艺下,利用Spectre模拟器设计、布置并仿真了一个超低电压(0.65 V)、5 GHz低噪声放大器(LNA)。仿真结果证实了所提出的LNA比传统级联码拓扑具有更好的性能。LNA在0.65 V电源下提供20 dB的高增益,1.4 dB的噪声系数,1.9 mW的功耗。据作者所知,这是迄今为止报道的电压最低的CMOS LNA设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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