A 4Gbps 0.57pJ/bit Process-Voltage-Temperature Variation Tolerant All-Digital True Random Number Generator in 45nm CMOS

S. Srinivasan, S. Mathew, V. Erraguntla, R. Krishnamurthy
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引用次数: 38

Abstract

This paper describes an all-digital on-die true random number generator implemented in 45nm CMOS technology, with random bit throughput of 4Gbps and total energy consumption of 0.57pJ/bit. A 2-step tuning mechanism enables robust operation in the presence of up to 20% fabrication-time process variation as well as immunity to run-time voltage and temperature fluctuation. The 100% use of digital components enables a compact layout occupying 1024µm^2 with high entropy/bit of 0.94, and scalable operation down to 0.5V, while passing all NIST RNG tests.
45nm CMOS 4Gbps 0.57pJ/bit容限电压温度变化全数字真随机数发生器
本文介绍了一种采用45nm CMOS技术实现的全数字片上真随机数发生器,其随机比特吞吐量为4Gbps,总能耗为0.57pJ/bit。两步调谐机制可以在高达20%的制造时间工艺变化情况下稳健运行,并且不受运行时电压和温度波动的影响。100%使用数字组件,紧凑的布局占用1024 μ m^2,高熵/位0.94,可扩展操作低至0.5V,同时通过所有NIST RNG测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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