S. Srinivasan, S. Mathew, V. Erraguntla, R. Krishnamurthy
{"title":"A 4Gbps 0.57pJ/bit Process-Voltage-Temperature Variation Tolerant All-Digital True Random Number Generator in 45nm CMOS","authors":"S. Srinivasan, S. Mathew, V. Erraguntla, R. Krishnamurthy","doi":"10.1109/VLSI.Design.2009.69","DOIUrl":null,"url":null,"abstract":"This paper describes an all-digital on-die true random number generator implemented in 45nm CMOS technology, with random bit throughput of 4Gbps and total energy consumption of 0.57pJ/bit. A 2-step tuning mechanism enables robust operation in the presence of up to 20% fabrication-time process variation as well as immunity to run-time voltage and temperature fluctuation. The 100% use of digital components enables a compact layout occupying 1024µm^2 with high entropy/bit of 0.94, and scalable operation down to 0.5V, while passing all NIST RNG tests.","PeriodicalId":267121,"journal":{"name":"2009 22nd International Conference on VLSI Design","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 22nd International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.Design.2009.69","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38
Abstract
This paper describes an all-digital on-die true random number generator implemented in 45nm CMOS technology, with random bit throughput of 4Gbps and total energy consumption of 0.57pJ/bit. A 2-step tuning mechanism enables robust operation in the presence of up to 20% fabrication-time process variation as well as immunity to run-time voltage and temperature fluctuation. The 100% use of digital components enables a compact layout occupying 1024µm^2 with high entropy/bit of 0.94, and scalable operation down to 0.5V, while passing all NIST RNG tests.