ESD characteristics of GGNMOS device in deep sub-micron CMOS technology

Abstract

MOS (Metal-Oxide-Semiconductor) transistor is widely used as ESD (Electro-Static Discharge) protection because of its good snapback characteristics. GGNMOS (Grounded-Gate N-channel MOS) has the advantage of simple construction, easy triggering and low power dissipation, also has the self-ability of ESD protection. The thesis researches in deep sub-micron CMOS (Complementary MOS) technology and MOS device physical dimensions impacting on GGNMOS's ESD characteristics. And the conclusion provide evidence for the device layout design.