NBTI stress on power VDMOS transistors under low magnetic field

Abstract

In this paper, we investigated the magnetic field impact on negative bias temperature instability (NBTI) of commercial power double diffused MOS transistor (VDMOS), using the charge pumping method (CP). We reported that both NBTI induce -interface and- oxide traps are reduced by applying the magnetic field. However, the dynamic of interface trap during the recovery phase is not affected. While, the recovery of oxide trap is accelerated by applied magnetic field.