Investigation of the influence of impact ionization feedback on the spatial distribution of hot carriers in an NMOSFET

Abstract

It is demonstrated with full-band Monte Carlo simulations that the spatial distribution of hot carriers generated by impact ionization feedback differs considerably from the one of the primary particles. Especially the distribution of hot electrons at the Si/SiO2-interface is broadened under the influence of a back bias and this spatial change of the hot electron injection into the interface might result in a different device degradation behaviour.