Electronic structure calculation of GaSb/GaAs quantum dot

Abstract

The paper describes a method to calculate electronic band structure, carrier wave function and quantized energies of dome-shaped GaSb/GaAs quantum dot (QD) structure. Type-II band alignment of GaSb/GaAs is introduced. Then, fabrication of realistic GaSb/GaAs QDs by molecular beam epitaxy is described. Based on the structural information obtained from realistic QD, finite element analysis of strain in and around QD is performed. Strain-induced bandgap modification is considered for calculating the discrete energy levels in QD. Effects of QD height and diameter variation are quantified.