A FinFET pass transistor based XOR and XNOR circuit designed for 18nm technology

Abstract

Due to significant short-channel effects scaling circuits for typical single-gate MOSFET’s is extremely difficult. Circuits are scaled down to rise operational speed, consume less space, and improve control over channel by gate configurations. But as a result of diluted geometries, lower supply voltage and higher frequencies all have impact on device, scaling faces a number of challenges. The short-channel effect issue in MOSFETs is subsidized by the use of FinFET. For good control, a second gate is added to double gate device and is placed opposite to first gate. The mostly used subcircuits particularly in arithmetic circuits are EX-OR, EX-NOR circuits which are created to boost speed and power. As a result, EX-OR, EX-NOR circuit which is based on CADENCE VIRTUOSO tool at 18nm, uses a 0.7v supply voltage performs better than a complex logic circuit.