A comparative analysis of 4KW PSBs for welding machine

P. Cancelliere, V. Colli, R. D. Stefano, G. Tomassi
{"title":"A comparative analysis of 4KW PSBs for welding machine","authors":"P. Cancelliere, V. Colli, R. D. Stefano, G. Tomassi","doi":"10.1109/PEDS.2003.1283201","DOIUrl":null,"url":null,"abstract":"The paper deals about the study conducted to evaluate the reliability of H bridge topology, for a DC/DC converter with phase-shift modulation strategy, with three different power devices. The first one is based on 500 V 0.087? 46 A HEXFET/sup /spl trade// power MOSFETs, the second one adopts MDmesh/sup /spl trade// power MOSFETs with external Schottky and ultrafast diodes in order to shunt the reverse current and the third one is based on CoolMOS power MOSFETs integrating the diodes in the same package. Each of them is reviewed, prototyped and investigated. Experimental results show the technological limits of each solution and suggest their right application range.","PeriodicalId":106054,"journal":{"name":"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.","volume":"334 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.2003.1283201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The paper deals about the study conducted to evaluate the reliability of H bridge topology, for a DC/DC converter with phase-shift modulation strategy, with three different power devices. The first one is based on 500 V 0.087? 46 A HEXFET/sup /spl trade// power MOSFETs, the second one adopts MDmesh/sup /spl trade// power MOSFETs with external Schottky and ultrafast diodes in order to shunt the reverse current and the third one is based on CoolMOS power MOSFETs integrating the diodes in the same package. Each of them is reviewed, prototyped and investigated. Experimental results show the technological limits of each solution and suggest their right application range.
焊机用4KW电源插座的对比分析
本文讨论了一种采用移相调制策略的DC/DC变换器在三种不同功率器件下的H桥拓扑可靠性评估研究。第一个是基于500 V 0.087?一个HEXFET/sup /spl贸易//功率mosfet,第二个采用MDmesh/sup /spl贸易//功率mosfet与外部肖特基和超快二极管,以分流反向电流,第三个是基于CoolMOS功率mosfet集成在同一封装的二极管。每一个都被审查,原型和调查。实验结果表明了每种溶液的技术极限,并提出了合适的适用范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信