The surface modification effect by irradiation of a surface wave excited hydrogen plasma onto zinc oxide thin films

Abstract

[Outline] We investigate about the increase of conductivity of zinc oxide thin films by irradiating a surface wave excited hydrogen plasma. [Experiment] Zinc oxide thin films are irradiated by surface wave hydrogen plasma generated by means of microwave. The changes of the conductivity of the thin films are evaluated by using a resistivity meter. The zinc oxide thin films used here have the thickness of 1500Aring which is formed by the reactant ion plating method. Diagnosis of a film is thicknessmeter. The surface of thin films and the chemical bond state of the depth direction are measured by XRD and XPS, SIMS. The XRD and XPS, SIMS are utilized to observe the crystal and chemical structures. Transmissivity is measured by spectrophotometer. [Result] The surface resistance changes from infinite to 3.0 times 10 2[/sq], without losing transparency by irradiating hydrogen microwave surface wave plasma at a zinc oxide thin film