The application of reticle analyzer in DRAM fab

Photomask Japan Pub Date : 2021-08-23 DOI:10.1117/12.2598020
Asei Chou, Wenhao Hsu, Andy Lan, Jason Fang, Claire Lu, Harper Yu, Zeyu Lei, Catherine Li, Steven Liu, V. Tolani
{"title":"The application of reticle analyzer in DRAM fab","authors":"Asei Chou, Wenhao Hsu, Andy Lan, Jason Fang, Claire Lu, Harper Yu, Zeyu Lei, Catherine Li, Steven Liu, V. Tolani","doi":"10.1117/12.2598020","DOIUrl":null,"url":null,"abstract":"In modern advanced IC fabs, reticle management is essential for process control and yield management, since any reticle issue can potentially impact thousands of wafers, resulting in a huge economic loss. For reticle caused issues, the possibility of human mistakes made in defect disposition has dramatically increased as the defects on reticles become more complicated. The difficulty in defect disposition originates from smaller critical dimension (CD) and complex pattern designs like aggressive OPC and SRAF. Conventionally, defect disposition after reticle inspection is done by operators or engineers, and defects are evaluated based on engineers’ experience or AIMS tool, which are high risk and time-consuming methods. Use of automated defect disposition solutions has been reported in some photomask shops, but in DRAM fabs, an efficient and accurate defect disposition system is not yet present. In collaboration with KLA, Changxin Memory Technology (CXMT) accessed and utilized KLA’s Reticle Analyzer (RA), an intuitive web-based analysis interface that integrates Automatic Defect Classification (ADC), Lithographic Printability Review (LPR), and Defect Progress Monitor (DPM) to overcome reticle defect disposition difficulties. The comprehensive analytics tool systematically disposes all defects detected by KLA reticle inspection systems, eliminating human error in defect classification and providing 99.5% accuracy without under-classifying any defects. Furthermore, CXMT studied the LPR solution for multiple critical layers with programmed-defect masks, then verified the simulated LPR results in CD error (CDE). The correlation between LPR results and wafer printing results shows accurate CDE prediction in high volume production. Additionally, DPM was used to generate statistical process control like charts for reticle defectivity. This study shows that the integrated RA software offers a modern solution for wafer fabs that automates reticle defect management and shortens time to decision for engineers.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photomask Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2598020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In modern advanced IC fabs, reticle management is essential for process control and yield management, since any reticle issue can potentially impact thousands of wafers, resulting in a huge economic loss. For reticle caused issues, the possibility of human mistakes made in defect disposition has dramatically increased as the defects on reticles become more complicated. The difficulty in defect disposition originates from smaller critical dimension (CD) and complex pattern designs like aggressive OPC and SRAF. Conventionally, defect disposition after reticle inspection is done by operators or engineers, and defects are evaluated based on engineers’ experience or AIMS tool, which are high risk and time-consuming methods. Use of automated defect disposition solutions has been reported in some photomask shops, but in DRAM fabs, an efficient and accurate defect disposition system is not yet present. In collaboration with KLA, Changxin Memory Technology (CXMT) accessed and utilized KLA’s Reticle Analyzer (RA), an intuitive web-based analysis interface that integrates Automatic Defect Classification (ADC), Lithographic Printability Review (LPR), and Defect Progress Monitor (DPM) to overcome reticle defect disposition difficulties. The comprehensive analytics tool systematically disposes all defects detected by KLA reticle inspection systems, eliminating human error in defect classification and providing 99.5% accuracy without under-classifying any defects. Furthermore, CXMT studied the LPR solution for multiple critical layers with programmed-defect masks, then verified the simulated LPR results in CD error (CDE). The correlation between LPR results and wafer printing results shows accurate CDE prediction in high volume production. Additionally, DPM was used to generate statistical process control like charts for reticle defectivity. This study shows that the integrated RA software offers a modern solution for wafer fabs that automates reticle defect management and shortens time to decision for engineers.
光栅分析仪在DRAM芯片中的应用
在现代先进的IC晶圆厂中,线轨管理对于工艺控制和产量管理至关重要,因为任何线轨问题都可能影响数千片晶圆,导致巨大的经济损失。对于由弧线引起的问题,随着弧线上的缺陷变得越来越复杂,人为错误处理的可能性急剧增加。缺陷处理的困难来自于较小的临界维数(CD)和复杂的模式设计,如侵略性OPC和SRAF。传统的检查后缺陷处理由操作人员或工程师完成,缺陷评估由工程师的经验或AIMS工具进行,是一种风险高、耗时长的方法。在一些光掩膜车间中已经报道了使用自动缺陷处理解决方案,但是在DRAM晶圆厂中,还没有一个有效和准确的缺陷处理系统。长新记忆科技(CXMT)与KLA合作,访问并利用KLA的十字线分析仪(RA),这是一个直观的基于web的分析界面,集成了自动缺陷分类(ADC),光刻可印刷性审查(LPR)和缺陷进度监控(DPM),以克服十字线缺陷处理困难。全面的分析工具系统地处理KLA网线检测系统检测到的所有缺陷,消除了缺陷分类中的人为错误,并提供99.5%的准确率,而不会对任何缺陷进行低分类。此外,CXMT还研究了具有可编程缺陷掩模的多关键层的LPR解决方案,并在CD误差(CDE)下验证了模拟LPR结果。LPR结果与晶圆印刷结果之间的相关性表明,在大批量生产中,CDE预测是准确的。此外,DPM还用于生成如十字线缺乏率图表等统计过程控制。该研究表明,集成的RA软件为晶圆厂提供了一种现代化的解决方案,可以自动管理焊条缺陷,缩短工程师的决策时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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