Effects of high charge densities in multi-GEM detectors

S. Franchino, D. González Díaz, R. Hall-Wilton, H. Muller, E. Oliveri, D. Pfeiffer, F. Resnati, L. Ropelewski, M. van Stenis, C. Streli, P. Thuiner, R. Veenhof
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引用次数: 12

Abstract

A comprehensive study, supported by systematic measurements and numerical computations, of the intrinsic limits of multi-GEM detectors when exposed to very high particle fluxes or operated at very large gains is presented. The observed variations of the gain, of the ion back-flow, and of the pulse height spectra are explained in terms of the effects of the spatial distribution of positive ions and their movement throughout the amplification structure. The intrinsic dynamic character of the processes involved imposes the use of a non-standard simulation tool for the interpretation of the measurements. Computations done with a Finite Element Analysis software reproduce the observed behaviour of the detector. The impact of this detailed description of the detector in extreme conditions is multiple: it clarifies some detector behaviours already observed, it helps in defining intrinsic limits of the GEM technology, and it suggests ways to extend them.
高电荷密度对多gem探测器的影响
在系统测量和数值计算的支持下,对多gem探测器在暴露于非常高的粒子通量或在非常大的增益下工作时的固有极限进行了全面的研究。观察到的增益、离子回流和脉冲高度谱的变化是根据正离子的空间分布及其在放大结构中的运动的影响来解释的。所涉及的过程的内在动态特性要求使用非标准模拟工具来解释测量结果。用有限元分析软件进行的计算再现了探测器所观察到的行为。这种对极端条件下探测器的详细描述的影响是多方面的:它澄清了一些已经观察到的探测器行为,它有助于定义GEM技术的内在限制,并提出了扩展它们的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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