Self-Heating Analysis of GaN-HEMT for Various Ambient Temperature and Substrate Thickness

Abstract

Impact of substrate thickness on self-heating effect for AlGaN/GaN HEMT is analyzed. Self-heating effect is analyzed using Technology Computer Aided Design (TCAD) simulation. GaN-HEMT with gate width of 1mm and gate length of 0.7 µm is considered for the analysis. In the simulation, substrate thickness is varied from 100 µm to 200 µm to study its impact on self-heating effect and drain current. In addition, the ambient temperature is varied from 300K to 700K and its impact is analyzed. Impact of gate-gate spacing on thermal performance is also analyzed. Furthermore, Kink effect on drain current at VGS=-2V is observed.