A New Harmonic Noise Frequency Filtering VCO and Mixer Co-design

J. Yoon, Nam-Young Kim
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Abstract

An asymmetrical inductance tank (AIT) structure provides high quality factor in tank and harmonic noise frequency filtering (HNFF) technique shorts harmonic noises to ground. The VCO directly drives the on-chipped double balanced mixer to convert RF carrier to IF frequency through local oscillator. Further, output amplifier improves final power performance. This paper presents the design for a prototype 1.721 GHz LC VCO, mixer, and output amplifier that have been designed for low phase noise and high output power. The HNFF-VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz offset and a tuning range of 261 MHz. While totally on-chipped downconverter shows a third-order input intercept point (IIP3) of 12.44 dBm, a third-order output intercept point (OIP3) of 21.44 dBm, an input P1dB of 3 dBm, an RF return loss of -31 dB, and an IF return loss of -26 dB. The RF-IF isolation is 57 dB. Also, this downconverter has a conversion gain of 8.9 dB through output amplifier. The totally on-chipped downconverter is 2.56 times 1.07 mm2 of chip area
一种新的谐波噪声频率滤波压控振荡器与混频器协同设计
非对称电感槽(AIT)结构为槽内提供了高质量因数,谐波频率滤波(HNFF)技术将谐波噪声缩短到地面。压控振荡器直接驱动片上双平衡混频器,通过本振将射频载波转换为中频频率。此外,输出放大器提高了最终功率性能。提出了一种低相位噪声、高输出功率的1.721 GHz LC压控振荡器样机、混频器和输出放大器的设计方案。在1 MHz偏置时,HNFF-VCO的相位噪声为-133.96 dBc/Hz,调谐范围为261 MHz。完全片上下变频器的三阶输入截距点(IIP3)为12.44 dBm,三阶输出截距点(OIP3)为21.44 dBm,输入P1dB为3 dBm,射频回波损耗为-31 dB,中频回波损耗为-26 dB。RF-IF隔离度为57 dB。此外,该下变频器通过输出放大器具有8.9 dB的转换增益。完全片上的下变频器是2.56乘以1.07 mm2的芯片面积
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