A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application

Abstract

A 28nm embedded Flash memory in this paper is designed for the Automotive application in Foundry. Through Temperature Auto-Tracking Sense Amplifier using the Bit line Charge Boost (BCB) and Bit line Leakage current Compensation (BLC) technology, it succeeded in implementing under 10ns read operation (>100MHz) and size improvement (7.42Mb/mm2). Also Word Line and YMUX Gate Boost (WYGB) is applied to secure a sensing margin at a low voltage (0.85V). These techniques enable 10ns reading operation of 288 bits (26.8Gb/s) at a time based on 16Mb memory size by improving sensing margin in temperature range of -40~150’C. It also implemented a competitive minimum IP size and we have secured high yield that enough to mass production as a result of Silicon validation. Based on competitive advantage through technology differentiation, it will be provided to various customers in all eFlash IP Foundry markets including Automotive business.