Novel Test Device for Non-destructive Experimental Characterization of Void Evolution in Microscale Solder Joints subjected to Thermal Aging

S. Prasad, Chetan Jois, G. Subbarayan
{"title":"Novel Test Device for Non-destructive Experimental Characterization of Void Evolution in Microscale Solder Joints subjected to Thermal Aging","authors":"S. Prasad, Chetan Jois, G. Subbarayan","doi":"10.1109/iTherm54085.2022.9899684","DOIUrl":null,"url":null,"abstract":"There is a trend towards reduction in micro-bump size and pitch in 2.5D/3D packaging driven by increased bandwidth and power efficiency requirements. One of the reliability challenges that arises is the void evolution in the solder joint volume of the micro-bump accompanied by the growth of Cu-Sn IMCs in the Cu pillar after thermal aging for long periods of time. In this study, we describe a methodology to fabricate test devices with multiple sub-30 µm pitch Cu-Sn-Cu junctions, with the capability to observe the growth of voids in the micro-bumps in a non-destructive manner. Typically used material and void characterization methods for microbump interconnects are destructive, requiring cross-sectioning and polishing of the samples before observation of voids in solder joints. The cross-sectioning is cumbersome, results in loss of data, and once cross-sectioned, the samples cannot be used for further thermal aging. A non-destructive method of characterization assures continuity in the experiments during the void evolution.The fabricated test device consists of multiple sub-30 µm pitch Cu-Sn-Cu junctions that are directly observable under a Scanning Electron Microscope(SEM). This setup can be used to do experiments ex-situ (by periodically pausing experiments, to measure void growth under SEM) or in-situ (with measurements of void growth in real-time under SEM). The test devices can also be subjected to current via a 4-wire Kelvin sensing probe setup attached to 3-axis piezo stages with a resolution of 50 nm. Multiple devices with varying sizes of solder bumps are fabricated on a single die. The dies are aged in an environmental chamber at a temperature of 175 ◦C for hundreds of hours. They were periodically taken out of the environmental chamber and the void evolution in the solder joint on the devices measured under both optical microscopes and under an SEM. Finally, the effect of different bump sizes on the reliability of the solder joints is reported in this study.","PeriodicalId":351706,"journal":{"name":"2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iTherm54085.2022.9899684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

There is a trend towards reduction in micro-bump size and pitch in 2.5D/3D packaging driven by increased bandwidth and power efficiency requirements. One of the reliability challenges that arises is the void evolution in the solder joint volume of the micro-bump accompanied by the growth of Cu-Sn IMCs in the Cu pillar after thermal aging for long periods of time. In this study, we describe a methodology to fabricate test devices with multiple sub-30 µm pitch Cu-Sn-Cu junctions, with the capability to observe the growth of voids in the micro-bumps in a non-destructive manner. Typically used material and void characterization methods for microbump interconnects are destructive, requiring cross-sectioning and polishing of the samples before observation of voids in solder joints. The cross-sectioning is cumbersome, results in loss of data, and once cross-sectioned, the samples cannot be used for further thermal aging. A non-destructive method of characterization assures continuity in the experiments during the void evolution.The fabricated test device consists of multiple sub-30 µm pitch Cu-Sn-Cu junctions that are directly observable under a Scanning Electron Microscope(SEM). This setup can be used to do experiments ex-situ (by periodically pausing experiments, to measure void growth under SEM) or in-situ (with measurements of void growth in real-time under SEM). The test devices can also be subjected to current via a 4-wire Kelvin sensing probe setup attached to 3-axis piezo stages with a resolution of 50 nm. Multiple devices with varying sizes of solder bumps are fabricated on a single die. The dies are aged in an environmental chamber at a temperature of 175 ◦C for hundreds of hours. They were periodically taken out of the environmental chamber and the void evolution in the solder joint on the devices measured under both optical microscopes and under an SEM. Finally, the effect of different bump sizes on the reliability of the solder joints is reported in this study.
一种用于微尺度焊点热老化过程中空洞演化的无损实验表征的新型测试装置
由于带宽和功率效率要求的增加,2.5D/3D封装的微凸点尺寸和间距有减小的趋势。在长时间的热老化后,微凸点的焊点体积中会出现空洞,同时铜柱中会出现Cu- sn IMCs的生长,这对可靠性提出了挑战。在本研究中,我们描述了一种制造具有多个sub-30µm节距Cu-Sn-Cu结的测试装置的方法,该装置能够以非破坏性的方式观察微凸起中空隙的生长。通常用于微凸点互连的材料和空洞表征方法是破坏性的,在观察焊点中的空洞之前需要对样品进行横截面和抛光。横截面处理繁琐,易造成数据丢失,且一旦横截面处理,样品就不能进行进一步的热老化。一种非破坏性的表征方法保证了空洞演化过程中实验的连续性。该测试装置由多个间距小于30 μ m的Cu-Sn-Cu结组成,可在扫描电子显微镜(SEM)下直接观察到。该装置可用于非原位实验(通过周期性暂停实验,在扫描电镜下测量空隙生长)或原位实验(在扫描电镜下实时测量空隙生长)。测试设备还可以通过连接到3轴压电级的4线开尔文传感探头装置承受电流,分辨率为50纳米。具有不同尺寸的焊料凸起的多个器件在单个模具上制造。模具在175℃的环境室中老化数百小时。他们定期从环境室中取出,并在光学显微镜和扫描电镜下测量器件上焊点的空洞演变。最后,本研究报告了不同凸点尺寸对焊点可靠性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信