Numerical Modeling of Radiation Heating of Semiconductor Heterostructures

Abstract

The influence of the thickness of the epitaxial layer on the temperature of the heterostructure sample Ge / Si as a result of its radiant heating is studied. It is shown that the beginning of growth of the epitaxial layer is accompanied by an abrupt increase in temperature, which is caused by an increase in the reflection coefficient at the sample boundary, due to the «replacement» of silicon by germanium.