A high linearity InGaP/GaAs HBT up-conversion double balanced mixer with common base drive stage

Se-Hwan Kim, Sang-Hun Lee, B. Shrestha, Sun-jin Kim, G. P. Kennedy, Nam-Young Kim, S. Cheon
{"title":"A high linearity InGaP/GaAs HBT up-conversion double balanced mixer with common base drive stage","authors":"Se-Hwan Kim, Sang-Hun Lee, B. Shrestha, Sun-jin Kim, G. P. Kennedy, Nam-Young Kim, S. Cheon","doi":"10.1109/APMC.2005.1606504","DOIUrl":null,"url":null,"abstract":"A high linearity double balanced mixer has been developed using InGaP/GaAs HBT technology. Features of the design include a common base drive stage and a common collector output buffer amplifier. The up-conversion mixer shows an input-referred 1-dB compression point (P/sub 1dB, IN/) of 15 dBm and a third order input intercept point (IIP3) of 21.6 dBm. The chip size of the developed mixer is 1.17 mm /spl times/ 1 mm. The isolation of LO-RF and LO-IF in the up-conversion mixer shows 58.5 dB and 86.2 dB, respectively.","PeriodicalId":253574,"journal":{"name":"2005 Asia-Pacific Microwave Conference Proceedings","volume":"169 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 Asia-Pacific Microwave Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2005.1606504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A high linearity double balanced mixer has been developed using InGaP/GaAs HBT technology. Features of the design include a common base drive stage and a common collector output buffer amplifier. The up-conversion mixer shows an input-referred 1-dB compression point (P/sub 1dB, IN/) of 15 dBm and a third order input intercept point (IIP3) of 21.6 dBm. The chip size of the developed mixer is 1.17 mm /spl times/ 1 mm. The isolation of LO-RF and LO-IF in the up-conversion mixer shows 58.5 dB and 86.2 dB, respectively.
一种高线性InGaP/GaAs HBT上转换双平衡混频器,具有公共基极驱动级
采用InGaP/GaAs HBT技术研制了一种高线性双平衡混频器。该设计的特点包括一个共同的基础驱动级和一个共同的集电极输出缓冲放大器。上变频混频器的输入参考1dB压缩点(P/sub 1dB, IN/)为15 dBm,三阶输入截距点(IIP3)为21.6 dBm。所研制的混合器切屑尺寸为1.17 mm /spl倍/ 1mm。上变频混频器中LO-RF和LO-IF的隔离度分别为58.5 dB和86.2 dB。
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