{"title":"Analysis and quantification of device spectral signatures observed using a spectroscopic photon emission microscope","authors":"J. Tao, W. Chim, D.S.H. Chan, J. Phang, Y.Y. Liu","doi":"10.1109/IPFA.1997.638069","DOIUrl":null,"url":null,"abstract":"Two normalisation methods have been introduced for the analysis and quantification of device spectral signatures obtained from the spectroscopic photon emission microscope (SPEMS). The parameter: /spl lambda//sub 1.0/ and /spl lambda//sub 50%/, having clear spectral distribution for different devices or mechanisms involved, were found to be useful in device failure analysis. It is also found that these wavelength parameters are dependent on the internal electric fields of the device. Hence, these can be used as an alternative method of monitoring electric fields in devices.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Two normalisation methods have been introduced for the analysis and quantification of device spectral signatures obtained from the spectroscopic photon emission microscope (SPEMS). The parameter: /spl lambda//sub 1.0/ and /spl lambda//sub 50%/, having clear spectral distribution for different devices or mechanisms involved, were found to be useful in device failure analysis. It is also found that these wavelength parameters are dependent on the internal electric fields of the device. Hence, these can be used as an alternative method of monitoring electric fields in devices.