A process technique to engineer the stress of thick doped polysilicon films for MEMS applications

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Pub Date : 2002-11-07 DOI:10.1109/IPFA.2002.1025663

A. Agarwal, R. Nagarajan, J. Singh

引用次数: 3

Abstract

It is shown that the LPCVD deposition technique and annealing of polysilicon effect the mechanical properties of the released structures, for micromachined sensors. Tensile residual stress is often required for a stable polysilicon MEMS structure after final release process.

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一种用于MEMS应用的厚掺杂多晶硅薄膜应力控制的工艺技术

结果表明，LPCVD沉积技术和多晶硅的退火对微机械传感器释放结构的力学性能有影响。拉伸残余应力通常是在最终释放过程后稳定的多晶硅MEMS结构所必需的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

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