A 9-16 GHz monolithic HEMT low noise amplifier with embedded limiters

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1995.470962

P. Huang, W. Jones, A. Oki, D. Streit, W. Yamasaki, P. Liu, S. Bui, B. Nelson

引用次数: 1

Abstract

A novel 9-16 GHz monolithic HEMT low noise amplifier with on-chip limiters has been designed, fabricated, and measured. This paper presents the design topology, the new fabrication technology, and the on-wafer measurements of this circuit. The limiter consists of one PIN diode and one Schottky diode. The low noise amplifier itself is a single stage balanced amplifier with one limiter embedded in each single-ended amplifier.<>

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9- 16ghz单片HEMT低噪声放大器，内置限幅器

设计、制作并测量了一种具有片上限制器的新型9-16 GHz单片HEMT低噪声放大器。本文介绍了该电路的设计拓扑结构、新的制造工艺和片上测量结果。该限幅器由一个PIN二极管和一个肖特基二极管组成。低噪声放大器本身是一个单级平衡放大器，在每个单端放大器中嵌入一个限制器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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