S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. H. Wu, C. Hsu, J. Guy, T. Y. Lee, H. P. Wong, X. Bao
{"title":"First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors","authors":"S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. H. Wu, C. Hsu, J. Guy, T. Y. Lee, H. P. Wong, X. Bao","doi":"10.1109/vlsitechnologyandcir46769.2022.9830395","DOIUrl":null,"url":null,"abstract":"Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (Vth = 1.1 V – 1.5 V) and low off-current (Ioff ~ 3 nA at 0.5 V for Vth = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >108 cycles.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (Vth = 1.1 V – 1.5 V) and low off-current (Ioff ~ 3 nA at 0.5 V for Vth = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >108 cycles.