A 900 MHz GSM PA in 250 nm CMOS with breakdown voltage protection and programmable conduction angle

Abstract

A three-stage 900 MHz GSM power amplifier implemented in 2 mm/sup 2/ in 250 nm CMOS outputs 2 W and 1-5 W with 30 and 43% drain and power-added efficiencies with 3.0 and 2.5 V power supply voltages, respectively. A cross-coupled self-biased cascode configuration reduces maximum voltage stress in the class-E driver stage to 1.6 V/sub DD/ without the use of additional bias voltages. A programmable conduction angle technique is also introduced and demonstrated.