Uncertainty estimation for gallium nitride diode model based on VNA measurement at 5.8 GHz

Abstract

This paper summarizes the uncertainty estimation for gallium nitride shottky diode based on vector network analyzer measurements at 5.8 GHz. The results were traceable to the metrology standard of S-parameter at NMIJ. Considering the uncertainty of the measurements, bias voltage must be applied over 2 V in measuring bias voltage dependence of reflection coefficient. The measurement uncertainty was propagated from reflection coefficient to impedance. As a result, the expanded uncertainty of real and imaginary part of impedance were 0.56 Ω and 0.57 Ω at 5.8 GHz, respectively.