A 300 MHz multi-banked eDRAM macro featuring GND sense, bit-line twisting and direct reference cell write

Abstract

A 0.12 /spl mu/m growable eDRAM macro has GND sense, bit-line twisting, direct reference cell write, a flexible multi-banking protocol, and column redundancy to support multi-banking. The protocol supports simultaneous activate, read/write and pre-charge to three different banks. Hardware measurements verify 300 MHz operation, 6.6 ns tacc, and 10 ns trc.