An ultra-wideband low power consumption differential low noise amplifier in SiGe:C BiCMOS technology

Abstract

A differential low noise amplifier (LNA) for ultra-wideband (UWB) applications is presented. The LNA has a -3 dB bandwidth of more than 2 to 12 GHz. The maximum gain is 14.5 dB with fairly flat characteristics. In the UWB frequency range of 3.1 to 10.6 GHz the gain ripple is less than 1.3 dB. Good impedance matching is obtained with |S/sub 11/| below -6.7 dB and |S/sub 22/| below -7.1 dB in the whole UWB range. The LNA consumes quite low dc power. The current consumption is 6.5 mA from a 2.5 V supply. The noise figure of the LNA is 3.9 dB to 5.5 dB in the whole UWB range. The input referred third-order intercept point IIP3 is -7.1 dBm and 1 dB compression point P/sub 1dB/ is -16.6 dBm measured at 7 GHz. This LNA is fully integrated and occupies a chip area of 0.9 mm including pads.