On mismatch number distribution of nanocrossbar logic mapping

Yehua Su, Wenjing Rao
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引用次数: 1

Abstract

Crossbar-based architectures are promising for the future nanoelectronic systems. Due to the inherent unreliability of nanotechnology, logic mapping onto highly defective crossbars needs to be performed on every chip. This posts significant challenge as the mapping problem is NP-complete. The complexity of the defect-tolerant logic mapping problems makes it hard to analyze runtime and model yield. This paper presents a new metric for evaluating the quality of the defect-tolerant logic mapping by tagging each mapping trial with a “score”, namely the mismatch number. Specifically, we look into the mismatch number distribution over: 1) crossbars having the same defect rate, 2) crossbars having the same defect number, and 3) a single crossbar with a given defect pattern. We show that the number of mismatches can be well modeled in probabilistic approaches, and the mismatch number distribution follows Normal/Poisson and Hypergeometric distribution, respectively. This new metric serves as the basis of performing runtime and yield analysis, which are difficult to estimate for logic mapping onto nanocrossbars. More importantly, the quantitative score for each underlying mapping trial serves as the basis in building the reliable nanocrossbar systems.
纳米横条逻辑映射的错配数分布
交叉棒结构在未来的纳米电子系统中很有前途。由于纳米技术固有的不可靠性,需要在每个芯片上对高度缺陷的交叉条进行逻辑映射。由于映射问题是np完全的,这就提出了重大挑战。容错逻辑映射问题的复杂性使得分析运行时和模型产出变得困难。本文提出了一种评价容错逻辑映射质量的新度量,通过给每个映射试验标记一个“分数”,即不匹配数。具体地说,我们查看以下不匹配数量分布:1)具有相同缺陷率的横杆,2)具有相同缺陷数量的横杆,以及3)具有给定缺陷模式的单个横杆。结果表明,失配数可以用概率方法很好地建模,失配数分布分别遵循正态/泊松分布和超几何分布。这个新的度量作为执行运行时和产量分析的基础,这是难以估计的逻辑映射到纳米交叉棒。更重要的是,每个底层制图试验的定量评分是构建可靠的纳米交叉棒系统的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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