{"title":"A transformer-based inverted complementary cross-coupled VCO with a 193.3dBc/Hz FoM and 13kHz 1/f3 noise corner","authors":"Song Hu, Fei Wang, Hua Wang","doi":"10.1109/RFIC.2016.7508242","DOIUrl":null,"url":null,"abstract":"This paper presents a transformer-based inverted complementary cross-coupled voltage-controlled oscillator (VCO) topology. Without compromising the start-up condition, it isolates the source nodes for the cross-coupled devices, suppresses the flicker noise up-conversion, and thus results in a superior phase noise performance. A prototype is implemented in a standard 130nm bulk CMOS process with a core area of 0.34mm2. At 1.86GHz, the measured FoM is 190.3/192.2/193.3dBc/Hz at 10k/100k/1MHz offsets with a 1/f3 phase noise corner of only 13kHz. The VCO consumes 1.1mA from a 1.5V supply. High FoM and low 1/f3 phase noise corners are consistently achieved over 20.8% frequency tuning range (1.68-2.07GHz).","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2016.7508242","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper presents a transformer-based inverted complementary cross-coupled voltage-controlled oscillator (VCO) topology. Without compromising the start-up condition, it isolates the source nodes for the cross-coupled devices, suppresses the flicker noise up-conversion, and thus results in a superior phase noise performance. A prototype is implemented in a standard 130nm bulk CMOS process with a core area of 0.34mm2. At 1.86GHz, the measured FoM is 190.3/192.2/193.3dBc/Hz at 10k/100k/1MHz offsets with a 1/f3 phase noise corner of only 13kHz. The VCO consumes 1.1mA from a 1.5V supply. High FoM and low 1/f3 phase noise corners are consistently achieved over 20.8% frequency tuning range (1.68-2.07GHz).