Low leakage and minimum energy consumption in CMOS logic circuits

R. Lorenzo, Saurabh Chaudhary
{"title":"Low leakage and minimum energy consumption in CMOS logic circuits","authors":"R. Lorenzo, Saurabh Chaudhary","doi":"10.1109/EDCAV.2015.7060536","DOIUrl":null,"url":null,"abstract":"This paper presents a novel design to reduce sub threshold leakage current. The leakage controlled transistors are utilized to change dynamically the ground voltage level which is based on output voltage level of logic gate. The leakage controlled transistors (LCT's) are utilized to reduce the leakage power and static energy consumption (static power-delay product) while maintaining the performance of delay. Simulation result based on 32nm Berkeley predictive technology model shows that the proposed technique achieves better performance than conventional designs.","PeriodicalId":277103,"journal":{"name":"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electronic Design, Computer Networks & Automated Verification (EDCAV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDCAV.2015.7060536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents a novel design to reduce sub threshold leakage current. The leakage controlled transistors are utilized to change dynamically the ground voltage level which is based on output voltage level of logic gate. The leakage controlled transistors (LCT's) are utilized to reduce the leakage power and static energy consumption (static power-delay product) while maintaining the performance of delay. Simulation result based on 32nm Berkeley predictive technology model shows that the proposed technique achieves better performance than conventional designs.
在CMOS逻辑电路中,低泄漏和最小的能量消耗
本文提出了一种降低亚阈值泄漏电流的新设计。利用漏控晶体管根据逻辑门的输出电压电平动态改变地电压电平。漏控晶体管(LCT)的目的是在保持延迟性能的同时降低泄漏功率和静态能耗(静态功率延迟积)。基于32nm Berkeley预测技术模型的仿真结果表明,该技术比传统设计具有更好的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信