Analysis of AlGaN/GaN HEMT with Lg=70 nm for Satellite application

Abstract

The advanced GaN HEMT technology has made GaN a good rival in satellite application because of his wide bandgap, high electron mobility and high breakdown voltage. In this paper, we report an AlGaN/GaN high electron mobility transistor structure with 4H-Sic substrate. The proposed structure shows a threshold voltage VTH=−4V, the current is about 500 mA, and maximum transconductance about 160 mS / mm. The cut-off frequency is 79 GHz and the value of max frequency is approximately of 125 GHz with GMS, GMA about 119 dB and the Ion/Ioff is 5.1010. The requirement for high switching speed has driven transistors to evolve to have high electron mobility and electron transport characteristics meeting the needs of high frequency, low noise, and high-power density applications which makes the outstanding DC performance of the proposed HEMT a splendid candidate for these applications. The simulations were done by using SILVACO TCAD tools.