Nano-polishing and subsequent optical characterization of CVD polycrystalline diamond films

J.A. Weima, A. Zaitsev, R. Job, G.C. Kosaca, F. Blum, G. Grabosch, W.R. Fahmer, J. Knopp
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引用次数: 8

Abstract

We have polished some CVD polycrystalline diamond films of diameter 15 mm using the vibrational thermochemical polishing technique. The surface morphology of the films were measured by optical microscopy and scanning electron microscopy before and after polishing. The initial roughness of the as-grown films as determined by stylus profilometry was in the neighborhood of 25 /spl mu/m for the growth side and 7 /spl mu/m for the substrate side. Polishing for several hours at temperatures between 900/spl deg/C and 750/spl deg/C thinned the surface roughness down to 2.2 nm. Confocal Raman spectroscopy was used to optically characterize the films at various stages of polishing. Non-diamond carbon bands were located at 1205 cm and a split band at 1353 cm/sup -1/ and 1453 cm/sup -1/ after initial polishing. The microcrystalline graphite band at 1580 cm/sup -1/ appeared at intermediate stages of polishing, These bands vanished with persistent polishing, leaving the surface entirely diamond-like after the final fine polishing at 750/spl deg/C. Photoluminescence of defect centers revealed that the only detectable impurities in the samples were nitrogen with zero-phonon lines at 2.156 eV and 1.945 eV and silicon with a zero-phonon line at 1.681. eV, accompanied by their respective phonon replicas. The defect centers are virtually uniformly distributed throughout the films.
CVD多晶金刚石薄膜的纳米抛光及后续光学表征
利用振动热化学抛光技术对直径为15mm的CVD多晶金刚石薄膜进行了抛光。采用光学显微镜和扫描电镜对抛光前后膜的表面形貌进行了测量。通过触针轮廓测定的生长膜的初始粗糙度在生长侧25 /spl mu/m附近,衬底侧7 /spl mu/m附近。在900至750 spl°C的温度下抛光几个小时,表面粗糙度降至2.2 nm。用共聚焦拉曼光谱对不同抛光阶段的薄膜进行了光学表征。初始抛光后,非金刚石碳带位于1205 cm,分裂带位于1353 cm/sup -1/和1453 cm/sup -1/。在抛光的中间阶段出现了1580 cm/sup -1/ /的微晶石墨带,随着抛光的持续,这些带逐渐消失,在750/spl℃的最终精细抛光后,表面完全呈现金刚石样。缺陷中心的光致发光表明,样品中唯一可检测到的杂质是在2.156 eV和1.945 eV处具有零声子线的氮和在1.681处具有零声子线的硅。eV,伴随着它们各自的声子复制品。缺陷中心几乎均匀地分布在整个薄膜中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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