Physical modeling of time dependent dielectric breakdown (TDDB) of BEOL oxide using Monte Carlo particle simulation

Seongwook Choi, Y. Park
{"title":"Physical modeling of time dependent dielectric breakdown (TDDB) of BEOL oxide using Monte Carlo particle simulation","authors":"Seongwook Choi, Y. Park","doi":"10.1109/SISPAD.2014.6931587","DOIUrl":null,"url":null,"abstract":"A simulation method for the TDDB of the BEOL oxide is investigated based on the 3D particle Monte Carlo simulation model which can evaluate the random motion of Cu ions in the oxide. While the conventional models do not consider the percolation theory of the TDDB phenomenon, the new model is based on the percolation model so that more rigorous physics can be considered. Also, the new method enables the statistical analysis of TDDB for the BEOL oxide. From the simulation study, it turns out that the assumptions of the previous models result in inaccurate characteristics and mechanisms. We expect that the simulation framework proposed in this paper could not only lead us to deeper physical insights but also could be readily applied to predict the reliability under the realistic conditions of the interconnect such as the 3D damascene structures or Cu-liner systems and so on.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A simulation method for the TDDB of the BEOL oxide is investigated based on the 3D particle Monte Carlo simulation model which can evaluate the random motion of Cu ions in the oxide. While the conventional models do not consider the percolation theory of the TDDB phenomenon, the new model is based on the percolation model so that more rigorous physics can be considered. Also, the new method enables the statistical analysis of TDDB for the BEOL oxide. From the simulation study, it turns out that the assumptions of the previous models result in inaccurate characteristics and mechanisms. We expect that the simulation framework proposed in this paper could not only lead us to deeper physical insights but also could be readily applied to predict the reliability under the realistic conditions of the interconnect such as the 3D damascene structures or Cu-liner systems and so on.
基于蒙特卡罗粒子模拟的BEOL氧化物时间相关介电击穿物理模型
研究了一种基于三维粒子蒙特卡罗模拟模型的BEOL氧化物TDDB的模拟方法,该模型可以评估Cu离子在氧化物中的随机运动。传统模型没有考虑TDDB现象的渗流理论,而新模型基于渗流模型,可以考虑更严格的物理性质。此外,该方法还可以对BEOL氧化物的TDDB进行统计分析。仿真研究表明,以往模型的假设导致了不准确的特征和机理。我们期望本文提出的仿真框架不仅可以使我们对物理有更深入的认识,而且可以很容易地应用于预测互连体在实际条件下的可靠性,如三维damascene结构或Cu-liner系统等。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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