Study On Microdefect Characteristics Analysis By RTA in 1MeV P Ion Implantation for High Memory Devices

Abstract

This article is concerned with researching microdefect characteristics by phosphorus 1 MeV ion implantation and Rs, XTEM, SRP, SlMS for the RTA process was measured and simulated As the dose was higher, the Rp was lower When the dose were 1 x 10'3/cm', 5x lO"/cm', 1 x 10'4/m2, the Rp were 0 73," 08pm, 0 9 ~ respectively. As the RTA annealing time was longer, the maximum concentration position was deeper from the surface and the concentration was lower Before the RTA annealing was done, we could not find any defect But after the RTA annealing was done, we could observe the RTA annealing changed the micro-defects into the secondary defects And we recognized those defects are removed by 1050°C RTA annealing