A pressure/oxygen/temperature sensing SoC for multimodality intracranial neuromonitoring

Wai Pan Chan, Arup K. George, M. Narducci, D. D. Cheam, S. C. Leong, M. Tsai, A. A. Rahman, M. K. Park, Z. Kong, J. Rao, Yuan Gao, M. Je
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引用次数: 5

Abstract

A fully integrated SoC for multimodality intracranial neuromonitoring is presented. This SoC includes a capacitive MEMS pressure sensor, an electrochemical oxygen sensor, a solid-state temperature sensor and sensor interface circuits in a single chip. Chopper stabilization and dynamic element matching techniques are applied in sensor interface circuits to reduce circuit noise and offset. On-chip calibration is implemented for each sensor to compensate process variations. Measured accuracies of the pressure, oxygen, and temperature sensors are ±1 mmHg, ±1 mmHg, and ±0.2 oC, respectively. Implemented in 0.18-μm CMOS, the SoC occupies an area of 1.4 mm × 4mm and consumes 188-μW DC power.
用于多模态颅内神经监测的压力/氧气/温度传感SoC
提出了一种完全集成的多模态颅内神经监测SoC。该SoC包括电容式MEMS压力传感器,电化学氧传感器,固态温度传感器和单个芯片中的传感器接口电路。在传感器接口电路中采用斩波稳定技术和动态元件匹配技术来降低电路噪声和失调。对每个传感器进行片上校准,以补偿工艺变化。压力传感器、氧气传感器和温度传感器的测量精度分别为±1mmhg、±1mmhg和±0.2 oC。该SoC采用0.18 μm CMOS,面积为1.4 mm × 4mm,直流功耗为188 μ w。
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