Accelerated Electron Detection Using Single Photon Avalanche Diodes

Abstract

We present the first reported use of CMOS compatible Single Photon Avalanche Diodes (SPAD) arrays for the detection of accelerated electrons, with the use of 3D-stacked backside illuminated (BSI) SPADs, and a Scanning Electron Microscope (SEM). We detected electrons at electron energies from 5 to 30 keV. This unveils an array of novel application detection opportunities for SPADs in particle radiation environments, taking advantage of their inherent sensitivity and timing capabilities, along with all the usual benefits associated with CMOS devices.