Simulation of the single-electron transistors based on different materials

Abstract

The theoretical investigation of the constructive-technological and electrophysical parameters influencing the single-electron transistor characteristics (temperature of operation, frequency limit, current-voltage characteristic) is carried out. The single-electron device simulator SET-NANODEV was used for the investigations. The single-electron transistors based on different metals were considered. Behavior of the single-electron transistor characteristics depending on material and construction parameters was determined.