Silicon nano-devices and single-electron devices

Abstract

Recent progress in CMOS LSI fabrication technology made possible to achieve nanometre-size silicon device. The devices should operate with CMOS transistors to efficiently use high sophisticated CMOS technologies. To achieve high functionality, especially using silicon as a base the difficulty arises in making the coherent length sufficiently longer than the device size. Another candidate is a single-electron transistor (SET), which does not use coherency. The device manipulates a single electron by means of a Coulomb blockade. Fabricating SETs using Si MOS process has been useful in overcoming because SETs were combined with MOSFET. This allows to emphasize the special functionality of SETs like multiple-valued operation, and high voltage gain.