On Die SSN Methodology for High Speed IO

Vinod Arjun Huddar
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Abstract

In this paper, we discuss the methodology of on-die simultaneous switching noise (SSN) simulation in high speed parallel bus like DDR5 associated with on-die capacitance and package inductance. The on-die supply ripple is typically larger than PCB power distribution network (PDN) noise even with a very good PCB PDN design. Resonance due to package inductance and on-die capacitance creates an impedance peak in the frequency domain and undesirable voltage noise in the time domain.
高速IO的模具SSN方法研究
本文讨论了DDR5等高速并行总线中与片上电容和封装电感相关的片上同步开关噪声(SSN)仿真方法。即使采用非常好的PCB PDN设计,片上电源纹波也通常大于PCB配电网络(PDN)噪声。由于封装电感和片上电容引起的谐振在频域产生阻抗峰值,在时域产生不期望的电压噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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