Rapid corona charging and stability of positive charge stored in SiO/sub 2//Si/sub 3/N/sub 4/ electrets

V. Leonov, P. Fiorini, C. van Hoof
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引用次数: 4

Abstract

A charging procedure combined with a HMDS- and a heat-treatment of the SiO/sub 2//Si/sub 3/N/sub 4/ electret on a silicon carrier is developed. The retention of a positive charge and its re-trapping is investigated. The optimized process parameters provide about 100-year lifetime of the electret. No spatial charge re-trapping is observed at a characteristic length of 0.1 mm after processing of the electret. A set of experiments is carried out to characterize the properties of the electret at temperatures up to 450/spl deg/C, which is important for its packaging or use at elevated temperatures.
SiO/sub 2//Si/sub 3/N/sub 4驻极体中快速电晕充电和正电荷的稳定性
本文提出了一种在硅载体上对SiO/sub - 2//Si/sub - 3/N/sub - 4驻极体进行HMDS和热处理相结合的充电方法。研究了正电荷的保留及其重新捕获。优化后的工艺参数可提供约100年的驻极体寿命。处理驻极体后,在0.1 mm的特征长度处没有观察到空间电荷重陷。在高达450/spl℃的温度下,进行了一系列实验来表征驻极体的特性,这对于其封装或在高温下使用是重要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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