Design and Defect Analysis of Novel NAND/NOR Gate in Quantum-dot Cellular Automata

Marshal Raj, Lakshminarayanan Gopalakrishnan
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引用次数: 2

Abstract

Quantum-dot Cellular automata is an emerging post-CMOS technology which offers promising features such as high speed, high packaging density and low power. It has led to the emergence of several circuit designs in Quantum-dot Cellular Automata. Circuits are designed in Quantum-dot Cellular Automata using majority gate and inverter. The majority gates function either as an AND or OR gate. NAND/NOR function is implemented by combing AND/OR gate with an inverter. A dedicated NAND/NOR gate will help to develop the QCA layout generation. Few structures are already existing in literature to implement NAND/NOR operation. All the existing designs require large area for implementation. In this paper, a novel NAND/NOR gate is proposed with the same cell count and area of a AND/OR gate. To validate the proposed gate, multiplexer and D-Flip Flop circuits are designed and implemented using the proposed gate. The simulation results show that the proposed gate consumes less area than the existing state-of-the-art designs. Defect analysis is performed for the proposed gate and compared with the existing designs. All the simulations and verifications are done using QCADesigner.
量子点元胞自动机新型NAND/NOR门的设计与缺陷分析
量子点元胞自动机是一种新兴的后cmos技术,具有高速、高封装密度和低功耗等特点。这导致了量子点元胞自动机中几种电路设计的出现。采用多数门和逆变器在量子点元胞自动机中设计电路。多数门的作用不是与门就是或门。NAND/NOR功能是通过与或门与逆变器相结合实现的。专用的NAND/NOR门将有助于开发QCA布局生成。目前文献中很少有实现NAND/NOR操作的结构。现有的设计都需要大面积的实现空间。本文提出了一种具有与或门相同单元数和面积的新型NAND/NOR门。为了验证所提出的门,使用所提出的门设计和实现了多路复用器和d触发器电路。仿真结果表明,所提出的栅极消耗的面积比现有的最先进的栅极设计要小。对所提出的闸门进行了缺陷分析,并与现有设计进行了比较。所有的仿真和验证都是使用qcaddesigner完成的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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