Temperature dependence of Pd thin film cryo resistors

A. Satrapinski, O. Hahtela, A. Savin, S. Novikov, N. Lebedeva
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引用次数: 4

Abstract

Cryo resistors based on Pd thin films were designed and investigated in temperature range 50 mK – 300 K. The resistors in the range 100 kΩ – 1.3 MΩ were fabricated using thermal evaporation technique. Minimum temperature coefficient, −0.4 (37)·10{−6}/K, in temperature range 50 mK – 100 mK has been obtained for 20 nm thin film 560 kΩ resistor. Binary and decimal configuration of connection of resistive elements were used for flexible adjustment of resistance value.
钯薄膜低温电阻器的温度依赖性
在50 mK ~ 300 K的温度范围内,设计并研究了基于钯薄膜的低温电阻器。采用热蒸发技术制备了100 kΩ ~ 1.3 MΩ范围内的电阻器。在50 ~ 100 mK温度范围内,20 nm薄膜560 kΩ电阻器的最低温度系数为−0.4(37)·10{−6}/K。电阻元件连接采用二进制和十进制配置,灵活调整电阻值。
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