Cost effective simulation of three-dimensional effects in the shallow trench isolation process

Abstract

As dimensions decrease, the device performances of MOS transistors are considerably more dependent on narrow channel effects. These effects are mainly due to lateral isolation, and can be better understood by means of three-dimensional simulation. In this paper, a simple method to investigate 3D effects induced by shallow trench isolation (STI) is presented; the approach which is based on suitable combinations of 2D simulations in planar cross sections is very cost effective in comparison with coupled process and device simulations in three dimensions. This method has been validated with respect to 3D device simulations, and has been applied to the analysis of the impact of certain process parameters on device performances which could not be achieved with present commercial 3D simulators.