R. Kaplar, B. Gunning, A. Allerman, M. Crawford, J. Flicker, A. Armstrong, L. Yates, A. Binder, J. Dickerson, G. Pickrell, P. Sharps, T. Anderson, J. Gallagher, A. Jacobs, A. Koehler, M. Tadjer, K. Hobart, M. Ebrish, M. Porter, R. Martinez, K. Zeng, D. Ji, S. Chowdhury, O. Aktas, J. Cooper
{"title":"Development of High-Voltage Vertical GaN PN Diodes","authors":"R. Kaplar, B. Gunning, A. Allerman, M. Crawford, J. Flicker, A. Armstrong, L. Yates, A. Binder, J. Dickerson, G. Pickrell, P. Sharps, T. Anderson, J. Gallagher, A. Jacobs, A. Koehler, M. Tadjer, K. Hobart, M. Ebrish, M. Porter, R. Martinez, K. Zeng, D. Ji, S. Chowdhury, O. Aktas, J. Cooper","doi":"10.1109/IEDM13553.2020.9372079","DOIUrl":null,"url":null,"abstract":"This paper describes the development of vertical GaN PN diodes for high-voltage applications. A centerpiece of this work is the creation of a foundry effort that incorporates epitaxial growth, wafer metrology, device design, processing, and characterization, and reliability evaluation and failure analysis. A parallel effort aims to develop very high voltage (up to 20 kV) GaN PN diodes for use as devices to protect the electric grid against electromagnetic pulses.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9372079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper describes the development of vertical GaN PN diodes for high-voltage applications. A centerpiece of this work is the creation of a foundry effort that incorporates epitaxial growth, wafer metrology, device design, processing, and characterization, and reliability evaluation and failure analysis. A parallel effort aims to develop very high voltage (up to 20 kV) GaN PN diodes for use as devices to protect the electric grid against electromagnetic pulses.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
