Andrea Pizzone, S. Srinivasan, P. Verheyen, G. Lepage, S. Balakrishnan, J. Van Campenhout
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引用次数: 5
Abstract
The dark current behavior of three different Ge waveguide photodiode designs integrated in a silicon photonics platform is investigated from 34 to 334 K. The activation energy is extracted to understand the relative contribution of Shockley-Read-Hall and trap-assisted tunneling at different temperatures and voltage biases.
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