Performance and stability of HgCdTe photoconductive devices: a study of passivation and contact technology

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791642

C. Musca, E. Smith, J. Dell, L. Faraone

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Abstract

HgCdTe is the material of choice for high performance infrared (IR) detectors operating in the long-wavelength and mid-wavelength (LWIR and MWIR, respectively) regions of the electromagnetic spectrum. Photoconductive HgCdTe IR detectors are commonly used for single element and linear arrays due to their higher yield when compared to photovoltaic devices. In this work characterisation of fabricated n-type photoconductors with blocking contacts and heterostructure passivation are presented. The two-layer heterostructure photoconductors exhibit up to a 100% increase in responsivity over the equivalent single-layer photoconductors at an applied electric field of 10 V/cm. The two-layer and single-layer photoconductors have been subjected to bake tests at 85/spl deg/C for 20 hours with the single-layer photoconductors showing a large degradation in performance compared to the two-layer photoconductors. A suitably modified commercial device simulation package has been used to model blocking contacts in two dimensions.

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HgCdTe光导器件的性能和稳定性:钝化和接触技术的研究

HgCdTe是在电磁波谱的长波长和中波长(分别为LWIR和MWIR)区域工作的高性能红外(IR)探测器的首选材料。光导HgCdTe红外探测器通常用于单元件和线性阵列，因为与光伏器件相比，它们的良率更高。本文介绍了具有阻塞接触和异质结构钝化的n型光导体的特性。在外加电场为10 V/cm时，两层异质结构光导体的响应率比等效单层光导体提高了100%。两层和单层光导体在85/spl度/C下进行了20小时的烘烤测试，单层光导体的性能与两层光导体相比有很大的下降。一个适当修改的商业设备仿真包已被用于模拟在二维的阻塞接触。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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