Advanced CMOS Integration Technologies for Future Mobile Applications

C. Claeys, E. Simoen
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引用次数: 1

Abstract

Future mobile communication systems and 5G base stations are relying on the availability of a variety of high-speed high-performing semiconductor technologies. Not only advanced CMOS technologies will form the cornerstone but also innovative heterogeneous technologies manufactured on a Si platform will be needed for future System-on-Chip applications. III-nitrides will play an important role in the RF and power parts. While increased system functionality and density can be achieved by 3D integration based on Through Silicon Vias, a strong focus is nowadays going to the monolithic or 3D sequential integration on a Si substrate. Several of these different technologies are reviewed and discussed.
面向未来移动应用的先进CMOS集成技术
未来的移动通信系统和5G基站依赖于各种高速高性能半导体技术的可用性。未来的片上系统应用不仅需要先进的CMOS技术,还需要在Si平台上制造的创新异构技术。氮化物将在射频和功率器件中发挥重要作用。虽然基于硅通孔的3D集成可以提高系统的功能和密度,但目前的重点是在硅衬底上进行单片或3D顺序集成。对其中几种不同的技术进行了回顾和讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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